Doping dependence of transport and magnetic properties in La1−xCaxVO3

Maiti, K. ; Vasanthacharya, N. Y. ; Sarma, D. D. (1997) Doping dependence of transport and magnetic properties in La1−xCaxVO3 Journal of Physics: Condensed Matter, 9 (35). pp. 7507-7514. ISSN 0953-8984

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We report temperature dependences of transport and magnetic properties of La1−xCaxVO3 controlled by charge carrier doping (x = 0.0 - 0.5). The system exhibits an insulator-to-metal transition concomitant with an antiferromagnetic-to-paramagnetic transition near x=0.2 with increasing substitution. Disorder effects are found to influence the low-temperature transport properties of both insulating and metallic compositions near the critical concentration. At higher temperature resistivity of the metallic compositions has a T2 dependence close to the critical concentration (x=0.2 and 0.3) and thus provides an example of disordered Fermi liquid behaviour near the Mott transition. In contrast, at larger doping (x=0.4 and 0.5) the resistivity exhibits a T1.5 dependence. The molar susceptibility for the metallic samples indicates substantial enhancements due to electron correlation.

Item Type:Article
Source:Copyright of this article belongs to Institute of Physics.
ID Code:46366
Deposited On:04 Jul 2011 11:52
Last Modified:17 Jul 2012 16:10

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