Chainani, A. ; Sarma, D. D. ; Das, I. ; Sampathkumaran, E. V. (1996) Low-temperature electrical conductivity of LaNi1−xFexO3 Journal of Physics: Condensed Matter, 8 (43). L631-L631. ISSN 0953-8984
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Official URL: http://iopscience.iop.org/0953-8984/8/43/001
Related URL: http://dx.doi.org/10.1088/0953-8984/8/43/001
Abstract
We report the electrical conductivity between 2 and 300 K for LaNi1−xFexO3 across the composition-controlled metal - insulator (m-i) transition. Using a method first suggested by Möbius, we identify the critical concentration xc to be 0.3 for the m-i transition. The negative temperature coefficient of resistivity observed at low temperatures in the metallic phase follows a temperature dependence characteristic of disorder effects. The semiconducting compositions(x≥0.3) do not show a simple activation energy but exhibit variable-range hopping at high temperatures confirming that the m-i transition in this system is driven by increasing disorder effects.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 46355 |
| Deposited On: | 04 Jul 2011 11:52 |
| Last Modified: | 20 Jun 2012 15:39 |
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