Novel Mn-doped chalcopyrites

Sato, K. ; Medvedkin, G. A. ; Ishibashi, T. ; Mitani, S. ; Takanashi, K. ; Ishida, Y. ; Sarma, D. D. ; Okabayashi, J. ; Fujimori, A. ; Kamatani, T. ; Akai, H. (2003) Novel Mn-doped chalcopyrites Journal of Physics and Chemistry of Solids, 64 (9-10). pp. 1461-1468. ISSN 0022-3697

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Official URL: http://www.sciencedirect.com/science/article/pii/S...

Related URL: http://dx.doi.org/10.1016/S0022-3697(03)00101-X

Abstract

Heavily Mn-doped II–VI–V2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing Mn on single crystalline substrate at nearly 400°C in an ultra high vacuum chamber. Well-defined ferromagnetic hysteresis with a saturation behavior appears in the magnetization curve up to above room temperature. The chemical states of the ZnGeP2:Mn interface has been clarified by a careful in situ photoemission spectroscopy. The as-prepared surface consists of Ge-rich, metallic Mn compound. In and below the sub-surface region, dilute divalent Mn species as precursors of the DMS phase exist. No MnP phase was observed at any stage of the depth profile. Theoretical band-calculation suggests that the system with vacancies (Cd, Vc, Mn)GeP2 or a non-stoichiometric (Cd, Ge, Mn)GeP2 are ferromagnetic and energetically stable although ferromagnetism is not stable in a stoichiometric compound (Cd, Mn)GeP2.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:C. Photoelectron Spectroscopy; C. Ab Initio Calculation
ID Code:46305
Deposited On:04 Jul 2011 06:57
Last Modified:04 Jul 2011 06:57

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