High-pressure structure and electronic transport in hole-doped La¾Ca¼MnO3 perovskites

Meneghini, C. ; Levy, D. ; Mobilio, S. ; Ortolani, M. ; Nuñez-Reguero, M. ; Kumar, Ashwani ; Sarma, D. D. (2001) High-pressure structure and electronic transport in hole-doped La¾Ca¼MnO3 perovskites Physical Review B: Condensed Matter and Materials Physics, 65 (1). 012111_1-012111_4. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v65/i1/e012111

Related URL: http://dx.doi.org/10.1103/PhysRevB.65.012111

Abstract

The structure and electronic transport properties of hole-doped La¾Ca¼MnO3 perovskite have been investigated as a function of pressure up to about 15 GPa. Though the applied pressure enhances the electrical conductivity, the high-pressure resistivity data point out a competing mechanism interfering with the pressure-induced charge delocalization that prevent the system from reaching a fully metallic state around room temperature. X-ray diffraction results reveal unexpected structural modifications with increasing pressure that can be interpreted with changes in the coherence length of the Jahn-Teller distortions.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:46293
Deposited On:04 Jul 2011 06:56
Last Modified:18 May 2016 02:14

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