Iyer, Kartik K. ; Sampathkumaran, E. V. (2009) Sharp fall of electrical resistance for a small application of magnetic field on a metastable form of a compound, Tb5Si3, under pressure Applied Physics Letters, 95 (14). 142504_1-142504_3. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://link.aip.org/link/?APPLAB/95/142504/1
Related URL: http://dx.doi.org/10.1063/1.3243462
Abstract
We report an unusual sensitivity of electrical resistivity (ρ) to an application of a small magnetic field in an intermetallic compound, Tb5Si3, under pressure. In this compound, there is a magnetic-field-induced first-order magnetic transition at 1.8 K. Under pressure, there is a metastable magnetic phase after reducing the field to zero. This metastable phase is relatively of higher ρ and interestingly a small magnetic field (< 2 kOe) in the reverse direction results in a sharp fall of ρ to restore virgin state ρ. The present finding could be relevant in spintronic applications.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Electrical Resistivity; Magnetic Transitions; Magnetoelectronics; Silicon Alloys; Terbium Alloys |
| ID Code: | 45757 |
| Deposited On: | 29 Jun 2011 03:33 |
| Last Modified: | 29 Jun 2011 03:33 |
Repository Staff Only: item control page
