Gai, P. L. ; Anderson, J. S. ; Rao, C. N. R. (1975) Direct lattice imaging of silicon carbide Journal of Physics D: Applied Physics, 8 (13). L157-L158. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/0022-3727/8/13/002
Related URL: http://dx.doi.org/10.1088/0022-3727/8/13/002
Abstract
The high-resolution electron microscopic technique of lattice imaging shows 15 and 3 AA repeat sequences in 6H SiC. The 15 AA sequence is further resolved into 2.5 AA layers corresponding to the interlayer separation.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 44749 |
| Deposited On: | 23 Jun 2011 05:20 |
| Last Modified: | 23 Jun 2011 05:20 |
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