shrivatsava, M. ; Jain, R. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) A solution toward the OFF-state degradation in drain-extended MOS device IEEE Transactions on Electron Devices, 57 (12). pp. 3536-3539. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1109/TED.2010.2082549
Abstract
We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 44492 |
| Deposited On: | 22 Jun 2011 05:33 |
| Last Modified: | 22 Jun 2011 05:33 |
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