Maji, D. ; Crupi, F. ; Amat, E. ; Simoen, E. ; De Jaeger, B. ; Brunco, D. P. ; Manoj, C. R. ; Rao, V. R. ; Magone, P. ; Guisi, G. ; Pace, C. ; Pantisano, L. ; Mitard, J. ; Rodriguez, R. ; Nafria, M. (2009) Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs IEEE Transactions on Electron Devices, 56 (5). pp. 1063-1069. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/TED.2009.2015854
Abstract
In this paper, a comprehensive study of hot-carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; (2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and (3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 44483 |
| Deposited On: | 22 Jun 2011 05:31 |
| Last Modified: | 22 Jun 2011 05:31 |
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