Reddy, M. V. R. ; Sharma, D. K. ; Patil, M. B. ; Rao, V. R. (2005) Power-area evaluation of various double-gate RF mixer topologies IEEE Electron Device Letters, 26 (9). pp. 664-666. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/LED.2005.853632
Abstract
In this letter, we analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-μm conventional MOSFETs, simultaneously driven DG MOSFETs (SDDG) and the independently driven DG MOSFETs (IDDG) are compared using extensive device simulations. In the frequency range 1-40 GHz, our simulation results show that the mixer circuits realized using the SDDG technologies show an order of magnitude lower power-area product, for a given transconductance gain, compared to the conventional and the IDDG technologies.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 44462 |
| Deposited On: | 22 Jun 2011 05:27 |
| Last Modified: | 22 Jun 2011 05:27 |
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