Kumar, A. ; Mahapatra, S. ; Lal, R. ; Rao, V. R. (2001) Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs Microelectronics Reliability, 41 (7). pp. 1049-1051. ISSN 0026-2714
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/S0026-2714(01)00067-1
Abstract
A multi-frequency transconductance technique for interface characterization of sub-micron SOI-MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in SOI devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI-MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 44448 |
| Deposited On: | 22 Jun 2011 03:50 |
| Last Modified: | 22 Jun 2011 03:50 |
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