Cheng, Baohong ; Rao, V. R. ; Woo, J. C. S. (1999) Exploration of velocity overshoot in a high-performance deep sub-0.1-µm SOI MOSFET with asymmetric channel profile IEEE Electron Device Letters, 20 (10). 538- 540. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/55.791935
Abstract
The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 μm. The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5×106 cm/s for a device with Leff=0.08 μm at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 44444 |
| Deposited On: | 22 Jun 2011 03:49 |
| Last Modified: | 22 Jun 2011 03:49 |
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