Ramgopal Rao, V. ; Eisele, I. ; Patrikar, R. M. ; Sharma, D. K. ; Vasi, J. ; Grabolla, T. (1997) High-field stressing of LPCVD gate oxides IEEE Electron Device Letters, 18 (3). pp. 84-86. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/55.556088
Abstract
We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 44439 |
| Deposited On: | 22 Jun 2011 03:48 |
| Last Modified: | 22 Jun 2011 03:48 |
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