Ratna Phani, A. ; Sarala Devi, G. ; Roy, Sujit ; Rao, V. J. (1993) MOCVD growth of boron nitride films from single source III–V precursor Journal of the Chemical Society, Chemical Communications (8). pp. 684-685. ISSN 0022-4936
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Official URL: http://pubs.rsc.org/en/content/articlelanding/1993...
Related URL: http://dx.doi.org/10.1039/C39930000684
Abstract
The sp2 and sp3 phases of boron nitride (BN) have been deposited on Si and Ni substrates by low pressure MO-CVD (metal organic chemical vapour deposition) at 450°C from diethylaminoborane and the films were characterised by Fourier transform infrared (FTIR) and X-ray diffraction (XRD); a plausible mechanism of CVD is proposed from gas-phase decomposition studies, and to our knowledge this is the first report of the growth of BN by MO-CVD using a single source.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Royal Society of Chemistry. |
| ID Code: | 42922 |
| Deposited On: | 08 Jun 2011 06:51 |
| Last Modified: | 08 Jun 2011 06:51 |
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