Raychaudhuri, A. K. ; Kar, Swastik ; Ghosh, Arindam (2003) Suppression of universal conductance fluctuations by an electric field in doped Si(P,B) near the metal-insulator transition Physica E: Low-dimensional Systems and Nanostructures, 18 (1-3). pp. 284-285. ISSN 1386-9477
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S13869...
Related URL: http://dx.doi.org/10.1016/S1386-9477(02)01019-6
Abstract
We present results of 1/f noise measurements at low frequency (10−3<f<10 Hz) and at low temperatures (1 K<T<20 K) in single crystals of Si doped with P and B. The doping concentration n is close to the critical composition nc of the metal-insulator transition (MIT). We observed that the noise which originates from the universal conductance fluctuation, can be suppressed effectively by an electric field of moderate magnitude at T<20 K. Near the critical region of MIT (n≈nc) the suppression is extremely large. We show that this effect can originate by dephasing arising from an electric field in presence of electron-electron interaction.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Universal Conductance Fluctuations; Decoherence; Electron-electron Interactions |
| ID Code: | 42715 |
| Deposited On: | 06 Jun 2011 07:37 |
| Last Modified: | 06 Jun 2011 07:37 |
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