Karunanithi, R. ; Raychaudhuri, A. K. ; Szücs, Z. ; Shivashankar, G. V. (1991) Behaviour of power MOSFETs at cryogenic temperatures Cryogenics, 31 (12). pp. 1065-1069. ISSN 0011-2275
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/001122...
Related URL: http://dx.doi.org/10.1016/0011-2275(91)90129-K
Abstract
In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor (SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic applications. The drain characteristics, temperature dependence of Rds(on) and switching behaviour have been studied in the temperature range 4.2-300 K in BSS91 and BSS92 MOSFETs. The experiments reveal that these types of power transistors are well suited for operations down to ≈30 K. However, below 30 K the operating characteristics make them unsuitable for application. This arises because of carrier freeze-out in the n¯ region on the substrate, which forms a drain.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Low Temperature Electronics; MOSFETs; Switching |
| ID Code: | 42662 |
| Deposited On: | 04 Jun 2011 13:49 |
| Last Modified: | 04 Jun 2011 13:49 |
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