Behaviour of power MOSFETs at cryogenic temperatures

Karunanithi, R. ; Raychaudhuri, A. K. ; Szücs, Z. ; Shivashankar, G. V. (1991) Behaviour of power MOSFETs at cryogenic temperatures Cryogenics, 31 (12). pp. 1065-1069. ISSN 0011-2275

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In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor (SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic applications. The drain characteristics, temperature dependence of Rds(on) and switching behaviour have been studied in the temperature range 4.2-300 K in BSS91 and BSS92 MOSFETs. The experiments reveal that these types of power transistors are well suited for operations down to ≈30 K. However, below 30 K the operating characteristics make them unsuitable for application. This arises because of carrier freeze-out in the n¯ region on the substrate, which forms a drain.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Low Temperature Electronics; MOSFETs; Switching
ID Code:42662
Deposited On:04 Jun 2011 13:49
Last Modified:04 Jun 2011 13:49

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