Bhat, S. V. ; Biswas, Kanishka ; Rao, C. N. R. (2007) Synthesis and optical properties of In-doped GaN nanocrystals Solid State Communications, 141 (6). pp. 325-328. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.ssc.2006.11.013
Abstract
Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Nanostructures; B. Chemical Synthesis; D. Optical Properties |
| ID Code: | 42418 |
| Deposited On: | 02 Jun 2011 13:39 |
| Last Modified: | 13 Jul 2012 11:59 |
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