Semiconductor-metal transition in v-doped Ti3O5

Rao, C. N. R. ; Rama Rao, G. (1977) Semiconductor-metal transition in v-doped Ti3O5 Physics Letters A, 61 (4). pp. 247-248. ISSN 0375-9601

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The semiconductor-metal transition in Ti3O5 is significantly affected by vanadium doping. The unit cell volume, ΔH, Δρ as well as ΔχM decrease markedly up to 0.1% V3O5 and gradually thereafter until at ~10% V3O5, the transition disappears.

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Source:Copyright of this article belongs to Elsevier Science.
ID Code:42392
Deposited On:02 Jun 2011 12:58
Last Modified:02 Jun 2011 12:58

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