Properties of nanostructured GaN prepared by different methods

Abstract

Various methods have been employed to prepare nanostructured GaN exhibiting reasonable surface areas. The methods include ammonolysis of γ-Ga₂O₃ or Ga₂O₃ prepared in the presence of a surfactant, and the reaction of a mixture of Ga₂O₃ and Ga(acac)₃ with NH₃. The latter reaction was also carried out in the presence of H₃BO₃. All the methods yield good GaN samples as characterized by X-ray diffraction, electron microscopy and photoluminescence measurements. Relatively high surface areas were obtained with the GaN samples prepared by the ammonolysis of γ-Ga₂O₃ (53 m² g⁻¹), and of Ga₂O₃ prepared in the presence of a surfactant (66 m² g⁻¹). GaN obtained by the reaction of NH₃ with a mixture of Ga₂O₃, Ga(acac)₃ and boric acid gave a surface area of 59 m² g⁻¹. GaN nanoparticles prepared by the nitridation of mesoporous Ga₂O₃ samples generally retain some porosity.