Imperfections in copper-silicon filings

Rama Rao, P. ; Anantharaman, T. R. (1965) Imperfections in copper-silicon filings Physica Status Solidi B, 9 (3). pp. 743-748. ISSN 0370-1972

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Detailed X-ray line-broadening studies are made on deformed filings of Cu96Si4, Cu92Si8, Cu90Si10, and Cu89Si11 alloys. The f.c.c. deformation fault parameters in fresh filings of the first three alloys, in each case of two different grain sizes, are determined by the Paterson method. Stacking-fault contributions to the observed diffraction broadening are eliminated by a procedure suggested by Christian and Spreadborough, and the domain size and lattice strain effects are separated by single line Fourier analysis. The fresh filings of the two-phase Cu89Si11 alloy show only the faulted h.c.p. structure, the f.c.c. phase having disappeared during deformation by filing. The fault parameter, domain size, and lattice strain values in the strain-induced h.c.p. phase are also estimated.

Item Type:Article
Source:Copyright of this article belongs to John Wiley and Sons.
ID Code:41805
Deposited On:31 May 2011 08:50
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