A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs

Hariharan, Venkatnarayan ; Vasi, Juzer ; Ramgopal Rao, V. (2009) A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs Solid-State Electronics, 53 (2). pp. 218-224. ISSN 0038-1101

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...

Related URL: http://dx.doi.org/10.1016/j.sse.2008.11.006

Abstract

In developing the drain current model of a symmetrically driven, undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET), one encounters a transcendental equation relating the value of an intermediate variable β (which is related to the inversion charge areal density and also surface-potential) to the gate and drain voltages; as a result, it doesn't have a closed form solution. From a compact modeling perspective, it is desirable to have closed form expressions in order to implement them in a circuit simulator. In this paper, we present an accurate closed form approximation for the inversion charge areal density, based on the Lambert-W function. We benchmark our approximation against other existing approximations and show that our approximation is computationally the most efficient and numerically the most robust, at a reduced but acceptable accuracy. Hence, it is suitable for use in implementing inversion charge based compact models.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Approximation; Charge; Compact Model; DGFET; Lambert; MOSFET
ID Code:41567
Deposited On:30 May 2011 09:20
Last Modified:30 May 2011 09:20

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