Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) Part II: On the three-dimensional filamentation and failure modeling of STI type DeNMOS device under various ESD conditions IEEE Transactions on Electron Devices, 57 (9). pp. 2243-2250. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/TED.2010.2055278
Abstract
Time evolution of self-heating and current filamentation are discussed in this paper for shallow-trench-isolation (STI)-type drained-enhanced n-channel metal-oxide-semiconductor (DeNMOS) devices. A deeper insight toward regenerative n-p-n action and its impact over various phases of filamentation and the final thermal runaway is presented. A modified STI-type DeNMOS device is proposed in order to achieve an improvement (~2×) in the failure threshold (IT2) and electrostatic discharge (ESD) window (VT2). The performance and filament behavior of the standard device under charge-device-model-like ESD conditions is also presented, which is further compared with the proposed modified device.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 41545 |
| Deposited On: | 30 May 2011 08:29 |
| Last Modified: | 30 May 2011 08:29 |
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