Antiferromagnetism in the Dy5Ir4Si10 system

Ramakrishnan, S. ; Ghosh, K. ; Chandra, Girish (1992) Antiferromagnetism in the Dy5Ir4Si10 system Physical Review B: Condensed Matter and Materials Physics, 45 (18). pp. 10769-10770. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v45/i18/p10769_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.45.10769

Abstract

In this paper we report the dc susceptibility and resistivity studies of the antiferromagnet Dy5Ir4Si10. We find that this compound undergoes an antiferromagnetic transition at 5.0 K and the effective magnetic moment observed is 10.6µB, which is equal to the free-ion value for the Dy atom. However, the resistivity shows a broad minimum at 17 K and a maximum at 6.5 K before it decreases below 6 K. We attribute this behavior of the resistivity to magnetic superzone effects in this compound.

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Deposited On:25 May 2011 11:33
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