Low-temperature magnetoresistance of a disordered metal

Rosenbaum, T. F. ; Milligan, R. F. ; Thomas, G. A. ; Lee, P. A. ; Ramakrishnan, T. V. ; Bhatt, R. N. ; DeConde, K. ; Hess, H. ; Perry, T. (1981) Low-temperature magnetoresistance of a disordered metal Physical Review Letters, 47 (24). pp. 1758-1761. ISSN 0031-9007

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Official URL: http://prl.aps.org/abstract/PRL/v47/i24/p1758_1

Related URL: http://dx.doi.org/10.1103/PhysRevLett.47.1758


A contribution to the magnetoresistance is observed at temperatures below 100 mK in bulk metallic Si: P that is unanticipated within theoretical analyses of localization. This contribution is positive, approximately independent of sample orientation, and varying roughly as the square root of the applied field. An analysis of Coulomb interactions including spin splitting is presented which, when combined with localization, describes the magnetoresistance.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:40811
Deposited On:25 May 2011 11:01
Last Modified:25 May 2011 11:01

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