Electronic and vibrational spectra of defects in neutron-irradiated silicon

Ramdas, A. K. (1982) Electronic and vibrational spectra of defects in neutron-irradiated silicon Journal of Nuclear Materials, 108-109 . p. 643. ISSN 0022-3115

Full text not available from this repository.

Official URL: http://linkinghub.elsevier.com/retrieve/pii/002231...

Related URL: http://dx.doi.org/10.1016/0022-3115(82)90536-0


Silicon irradiated with fast neutrons exhibits a variety of infrared absorption, photoconductivity [1] and photoluminescence spectra [2] in the infrared. They have been attributed to photo-excitation and photoionization of carriers bound to vacancies, divacancies, and impurity-defect complexes. Local modes of impurity-defect complexes have been observed [3]. One-phonon density of states of the host crystal manifests itself in the first-order infrared absorption as well as the Raman effect, a consequence of the absence of the strict translational symmetry in the irradiated crystal [4,5]. Microscopic models are available for many of the defect centres. If silicon is subjected to slow-neutron irradiation, 30Si naturally present in 3.05% abundance, transmutes to 31P via the 30Si(n,Y)31 Si → 31P+β - reaction. After eliminating the radiation damage produced during this neutron transmutation doping, homogeneously doped Si(P) is obtained. The electronic excitation spectrum of the phosphorus donors observed as a function of annealing is highly instructive in the context of the charged defects produced during the neutron transmutation process [6].

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:40468
Deposited On:24 May 2011 14:26
Last Modified:24 May 2011 14:26

Repository Staff Only: item control page