Raman probe to estimate surface energies of embedded semiconductor nanostructures

Dhara, S. ; Magudapathy, P. ; Nair, K. G. M. ; Baldev Raj, (2010) Raman probe to estimate surface energies of embedded semiconductor nanostructures Journal of Raman Spectroscopy, 41 (6). pp. 628-631. ISSN 0377-0486

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/jrs.250...

Related URL: http://dx.doi.org/10.1002/jrs.2506

Abstract

Embedded semiconductor nanoclusters (nc-) of GaN, Si and InN were grown using the ion-implantation technique and subsequent annealing. Detailed phonon properties were studied for the identification of the grown phases as well as to estimate the stress developed in these embedded structures. The surface energies of the embedded nanoclusters were calculated in analogy with the stressed spherical nanoclusters and excess pressure in a liquid drop. The estimated surface energies for nc-GaN ~4Nm−1, nc-InN ~2.7 Nm−1 and nc-Si ~1.4 Nm−1 are discussed in the light of possible phase transition in the nanocrystalline systems.

Item Type:Article
Source:Copyright of this article belongs to John Wiley and Sons.
Keywords:Raman Spectroscopy; Surface Energy; GaN; InN; Si
ID Code:40428
Deposited On:24 May 2011 05:57
Last Modified:24 May 2011 05:57

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