Resonant interaction of acceptor states and optical phonons in silicon

Chandrasekhar, H. R. ; Ramdas, A. K. (1976) Resonant interaction of acceptor states and optical phonons in silicon Solid State Communications, 18 (3). pp. 405-408. ISSN 0038-1098

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...

Related URL: http://dx.doi.org/10.1016/0038-1098(76)90035-1

Abstract

The resonance broadening of line 2 in the excitation spectrum of gallium acceptors in silicon due to near coincidence of its energy with that of the zone center optical phonons , h-ω0, has been confirmed under significantly improved experimental conditions. An additional feature labeled X and line 2 are interpreted as mixed excitations of the bound-hole and the optical phonon. Under uniaxial stress, the stress induced components of line 2 which approach h-ω0 become more phonon-like and get "pinned" while the components of X become bound-hole-like as they recede from h-ω0, and exhibit a striking increase in intensity.

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