Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd1-xMnxTe

Peterson, D. L. ; Petrou, A. ; Dutta, M. ; Ramdas, A. K. ; Rodriguez, S. (1982) Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd1-xMnxTe Solid State Communications, 43 (9). pp. 667-669. ISSN 0038-1098

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...

Related URL: http://dx.doi.org/10.1016/0038-1098(82)90767-0

Abstract

We report spin-flip Raman scattering in Cd1-xMnxTe in the paramagnetic phase. The spin-flip Raman line at ω SFR is observed in a wide range of compositions, x = 0.01 to 0.18. The polarization characteristics establish that the line is associated with the spin-flip transition of an electron. The large effective g-factor, the temperature and magnetic field dependence of ωSFR can be traced to the especially important exchange interaction between Mn++ and band electrons in the diluted magnetic semiconductors.

Item Type:Article
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ID Code:40397
Deposited On:24 May 2011 14:26
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