Effect of CH4/H2 plasma ratio on ultra-low friction of nano-crystalline diamond coating deposited by MPECVD technique

Sharma, Neha ; Kumar, N. ; Sundaravel, B. ; Panda, Kalpataru ; David, Wang ; Kamarrudin, M. ; Dash, S. ; Panigrahi, B. K. ; Tyagi, A. K. ; Lin, I-Nan ; Baldev Raj, (2011) Effect of CH4/H2 plasma ratio on ultra-low friction of nano-crystalline diamond coating deposited by MPECVD technique Tribology International . ISSN 0301-679X

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S03016...

Related URL: http://dx.doi.org/10.1016/j.triboint.2011.03.028

Abstract

Nano-crystalline diamond coatings were deposited on the silicon substrate using Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD). Experiments were performed by varying the H2 content in CH4/H2 plasma during synthesis. Raman spectral analysis revealed that with decrease in hydrogen content in the CH4 plasma, the ID/IG ratio decreases with the formation of smaller crystallites. Such a film possesses a large grain boundary fraction containing hydrogenated amorphous carbon (a-C:H). During tribological test, sufficient amount of hydrogen present in the grain boundary passivates the dangling σ- bond causing ultra-low friction and extremely low wear evident by improvement in microstructure.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Nano-Crystalline Diamond; Dangling Bonds; Coefficient of Friction
ID Code:40333
Deposited On:23 May 2011 12:58
Last Modified:23 May 2011 12:58

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