Singh, B. R. ; Rai, S. S. ; Srivastava, R. S. (1972) Transport of sodium ions in silicon dioxide films using MOS structure Physica Status Solidi A, 13 (1). pp. 51-59. ISSN 0031-8965
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.22...
Related URL: http://dx.doi.org/10.1002/pssa.2210130103
Abstract
Metal-oxide-semiconductor devices rinsed in NaCl solution are used to study the sodium ion transport phenomenon by C-U characteristics measurement. The excess charge induced depending on time, temperature, and voltage are given. Fast recovery in these devices has been observed and explained on the basis of transport of Na+ ions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons. |
| ID Code: | 38700 |
| Deposited On: | 03 May 2011 09:01 |
| Last Modified: | 03 May 2011 09:01 |
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