The study of electron dynamics in n-type CdS by spin-flip Raman scattering

Geschwind, S. ; Walstedt, R. E. ; Romestain, R. ; Narayanamurti, V. ; Kummer, R. B. ; Feigenblatt, R. ; Devlin, G. (1980) The study of electron dynamics in n-type CdS by spin-flip Raman scattering Philosophical Magazine Part B, 42 (6). pp. 961-977. ISSN 1364-2812

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A review is presented of the application of spin-flip Raman scattering (SFRS) to the study of electron delocalization in the insulator-metal transition in n-type CdS. The delocalization in the metallic regime appears as a diffusional Dq2 term in the SFRS linewidth, where q is the light scattering vector, and D is well described for small q by the transport parameters of a non-interacting Fermi gas. The spin Faraday rotation, which is part of the same spin-photon interaction that gives rise to the SFRS, is used to measure selectively, the donor spin susceptibility, X. Strong focus is placed on the properties of X in the insulating region where the doped semiconductor is a model 'amorphous antiferromagnet'. No evidence of any spin-glass-like ordering transition is found at temperatures even far below the percolation threshold. Pure spin diffusion without charge transport is also observed and gives information on spin correlations.

Item Type:Article
Source:Copyright of this article belongs to Taylor and Francis Ltd.
ID Code:30703
Deposited On:23 Dec 2010 12:45
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