Altfeder, I. B. ; Golovchenko, J. A. ; Narayanamurti, V. (2001) Confinement-enhanced electron transport across a metal-semiconductor interface Physical Review Letters, 87 (5). 056801_1-056801_4. ISSN 0031-9007
![[img]](http://repository.ias.ac.in/style/images/fileicons/application_pdf.png)
|
PDF
- Publisher Version
489kB |
Official URL: http://link.aps.org/doi/10.1103/PhysRevLett.87.056...
Related URL: http://dx.doi.org/10.1103/PhysRevLett.87.056801
Abstract
We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 30638 |
| Deposited On: | 23 Dec 2010 12:59 |
| Last Modified: | 17 May 2016 13:16 |
Repository Staff Only: item control page
