Shalish, I. ; Altfeder, I. B. ; Narayanamurti, V. (2002) Observations of conduction-band structure of 4H- and 6H-SiC Physical Review B, 65 (7). 073104_1-073104_4. ISSN 1098-0121
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.65.073104
Related URL: http://dx.doi.org/10.1103/PhysRevB.65.073104
Abstract
Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the 4H and 6H polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of 4H-SiC, in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from 6H-SiC, are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in 6H-SiC photoluminescence spectra.
| Item Type: | Article |
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| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 30637 |
| Deposited On: | 23 Dec 2010 12:59 |
| Last Modified: | 17 May 2016 13:16 |
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