Evolution of the GaNxP1-x alloy band structure: a ballistic electron emission spectroscopic investigation

Reddy, C. V. ; Martinez II, R. E. ; Narayanamurti, V. ; Xin, H. P. ; Tu, C. W. (2002) Evolution of the GaNxP1-x alloy band structure: a ballistic electron emission spectroscopic investigation Physical Review B, 66 (23). 235313 _1-235313 _4. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v66/i23/e235313

Related URL: http://dx.doi.org/10.1103/PhysRevB.66.235313

Abstract

The evolution of the band structure of the GaNxP1-x alloy, under dilute nitrogen concentrations (x=0, 0.0028, 0.0086, 0.0210, and 0.0310), is investigated using ballistic electron emission spectroscopy (BEES). The observation of fine structure in the BEES spectra of GaNP samples is discussed in terms of a possible splitting in the degeneracy of the X valley due to the nitrogen induced intense perturbation in the GaP lattice. For an incorporation of 3% of N, the reduction in the band gap is approximately measured to be 300 meV. The data are qualitatively described by the recent perturbed host states model of Kent and Zunger.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:30635
Deposited On:23 Dec 2010 12:59
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