Radiation-induced oscillatory Hall effect in high-mobility GaAs/AlxGa1-xAs devices

Mani, R. G. ; Narayanamurti, V. ; Klitzing, K. Von ; Smet, J. H. ; Johnson, W. B. ; Umansky, V. (2004) Radiation-induced oscillatory Hall effect in high-mobility GaAs/AlxGa1-xAs devices Physical Review B, 69 (16). 161306_1-161306_4. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v69/i16/e161306

Related URL: http://dx.doi.org/10.1103/PhysRevB.69.161306

Abstract

We examine the radiation induced modification of the Hall effect in high-mobility GaAs/AlxGa1-xAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance Rxy that correlates with an increase in the diagonal resistance Rxx, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:30630
Deposited On:23 Dec 2010 13:01
Last Modified:17 May 2016 13:15

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