Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa1-xAs devices

Mani, R. G. ; Smet, J. H. ; Klitzing, K. Von ; Narayanamurti, V. ; Johnson, W. B. ; Umansky, V. (2004) Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa1-xAs devices Physical Review B, 69 (19). 193304_1-193304_4. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v69/i19/e193304

Related URL: http://dx.doi.org/10.1103/PhysRevB.69.193304

Abstract

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron are evaluated from a quantitative study of beats observed in radiation-induced magneto-resistance oscillations.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:30629
Deposited On:23 Dec 2010 13:01
Last Modified:17 May 2016 13:15

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