Anisotropic metal-insulator transition in epitaxial thin films

Altfeder, I. B. ; Liang, X. ; Yamada, T. ; Chen, D. M. ; Narayanamurti, V. (2004) Anisotropic metal-insulator transition in epitaxial thin films Physical Review Letters, 92 (22). 226404_1-226404_4. ISSN 0031-9007

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By comparing the properties of In and Pb quantum wells in a scanning tunneling microscopy subsurface imaging experiment, we found the existence of lateral bound states, a 2D Mott-Hubbard correlation gap, induced by transverse confinement. Its formation is attributed to spin or charge overscreening of quasi-2D excitations. The signature of the 2D confinement-deconfinement transition is also experimentally observed, with the correlation gap being pinned in the middle of the conduction band. A self-organized 2D Anderson lattice is suggested as a new ground state.

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Source:Copyright of this article belongs to American Physical Society.
ID Code:30628
Deposited On:23 Dec 2010 13:01
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