Radiation-induced zero-resistance states in GaAs/AlGaAs heterostructures: voltage-current characteristics and intensity dependence at the resistance minima

Mani, R. G. ; Narayanamurti, V. ; Klitzing, K. Von ; Smet, J. H. ; Johnson, W. B. ; Umansky, V. (2004) Radiation-induced zero-resistance states in GaAs/AlGaAs heterostructures: voltage-current characteristics and intensity dependence at the resistance minima Physical Review B, 70 (15). 155310_1-155310_5. ISSN 1098-0121

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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.70.155310

Related URL: http://dx.doi.org/10.1103/PhysRevB.70.155310

Abstract

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage-current characteristics, and the resistance at the minima versus the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:30627
Deposited On:23 Dec 2010 13:01
Last Modified:17 May 2016 13:15

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