Transverse momentum nonconservation at the ErAs/GaAs interface

Abstract

Because ErAs, a semimetal, grows epitaxially on GaAs(100), ErAs-base/ GaAs-collector metal-base transistors provide a uniquely simple system in which to study the interfacial transverse momentum conservation of hot electrons. This system is also of interest for metal-semiconductor superlattice thermal energy conversion devices that utilize ErAs as the interbarrier material. A key requirement for such devices to outperform bulk thermal energy converters is the nonconservation of transverse momentum. Our results, indicating total nonconservation of transverse momentum, could therefore lead to significantly more efficient thermal energy conversion devices.