Electroless deposition of epitaxial Pb1-xHgxS films

Sharma, N. C. ; Pandya, D. K. ; Sehgal, H. K. ; Chopra, K. L. (1979) Electroless deposition of epitaxial Pb1-xHgxS films Thin Solid Films, 59 (2). pp. 157-164. ISSN 0040-6090

Full text not available from this repository.

Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...

Related URL: http://dx.doi.org/10.1016/0040-6090(79)90289-X


Epitaxial films of Pb1-xHgxS (x = 0-0.33) were grown on single-crystal (111) Ge and (111) Si substrates by an electroless deposition process under conditions of controlled dilutions and reaction bath temperatures. Electron microscopy and electron diffraction studies show the predominance of [ 1-11] and [ 1-12] orientations in films grown on (111) Ge and (111) Si substrates respectively. The films grew initially as β'-Pb1-xHgxS up to a thickness of about 800 Å; beyond this thickness the films were α'-Pb1-xHgxS.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:30510
Deposited On:23 Dec 2010 13:26
Last Modified:28 May 2011 08:48

Repository Staff Only: item control page