Tunneling in 2-D quantum dots via quantum adiabatic switching route

Ghosh, Manas ; Ghosh, Subhasree ; Bhattacharyya, S. P. (2010) Tunneling in 2-D quantum dots via quantum adiabatic switching route Journal of Physics and Chemistry of Solids, 71 (5). pp. 745-751. ISSN 0022-3697

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00223...

Related URL: http://dx.doi.org/10.1016/j.jpcs.2010.01.013

Abstract

We explore the phenomenon of tunneling in single carrier 2-D quantum dot by quantum adiabatic switching route. The confinement in the y-direction is kept harmonic which ensures that tunneling is allowed only along the x-direction. The harmonic confinement potential is kept fixed and a constant external magnetic field is applied along the z-direction. The growth of probability density in the classically forbidden zones and tunneling current are monitored critically which reveals how tunneling significantly depends on the barrier parameters. The efficacy of the switching function in enforcing adiabaticity of the evolution is demonstrated. The effective mass, barrier width, and height emerge as important control parameters.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Electronic Materials; A. Nanostructures; A. Quantum Wells; A. Semiconductors; D. Lattice Dynamics
ID Code:2973
Deposited On:09 Oct 2010 10:26
Last Modified:20 May 2011 04:32

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