Hazra, Ram Kuntal ; Ghosh, Manas ; Bhattacharyya, S. P. (2008) Modulation of the electronic states of 2-D single carrier quantum dots due to presence of hole doped impurity perturbations Chemical Physics, 344 (1-2). pp. 61-71. ISSN 0301-0104
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/S03010...
Related URL: http://dx.doi.org/10.1016/j.chemphys.2007.11.012
Abstract
We report the effects of on- and off-center attractive impurities on regular parabolic dots and their impact on the level structures as a function of the strength of the transverse magnetic field. Information entropy, probability density and level-spacing distribution are used as keys to monitor the pattern of evolution of electronic states. The level structures are marked by crossings and anticrossings and sharply peaked level-spacing distribution functions, either at low or high field strengths confirming the presence of level repulsion. The anticipated emergence of quantum chaos as a result of hole doping is demonstrated in dots with off-centre impurities.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Quantum Dots; Impurity Perturbations In Dots; Level Spacing Distribution; Peak-spacing Statistics; Gaussian Attractor; Exponential Attractor; Information Entropy |
| ID Code: | 2952 |
| Deposited On: | 09 Oct 2010 10:28 |
| Last Modified: | 20 May 2011 06:15 |
Repository Staff Only: item control page
