Short pulse techniques for estimating the temperature and impurity concentration of the active layer of a Gunn diode

Fentem, P. J. ; Nag, B. R. (1973) Short pulse techniques for estimating the temperature and impurity concentration of the active layer of a Gunn diode Solid State Electronics, 16 (11). pp. 1297-1299. ISSN 0038-1101

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003811...

Related URL: http://dx.doi.org/10.1016/0038-1101(73)90086-5

Abstract

A coaxial mount has been designed to allow the short pulse current-voltage characteristics of a Gunn diodes to be measured at various ambient temperatures. The results can be used, in conjunction with c.w. measurements, to estimate the temperature of the active layer and provide a simple means of comparing the thermal properties of both different forms of diode construction and heat sinking. The mount can also be used in an experiment to estimate the impurity concentration of the diode.

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