Ga0.47In0.53As-the material for high-speed devices

Nag, Biswaranjan (1984) Ga0.47In0.53As-the material for high-speed devices Pramana - Journal of Physics, 23 (3). pp. 411-421. ISSN 0304-4289

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Electron transport properties of Ga0.47In0.53As are reviewed. The available physical constants of the material and results on electron mobility in bulk materials, 2deg systems and under hot-electron conditions are presented. Applications of the material in the construction offet's and photo-conductive detectors are briefly discussed.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Ternary Alloy Semiconductor; Electron Mobility; FET- Photodetector
ID Code:28775
Deposited On:15 Dec 2010 11:35
Last Modified:17 May 2016 11:48

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