Submicron electron transport in GaAs at 77 K

Nag, B. R. ; Deb Roy, M. (1984) Submicron electron transport in GaAs at 77 K International Journal of Electronics, 57 (4). pp. 527-533. ISSN 0020-7217

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Electron transport in GaAs samples at 77 K for lengths of 0. 1, 0.2 and 0.5 µm is analysed by using a Monte Carlo model. The characteristics are found to be neither collision-dominated nor ballistic. The effects of collisions arc significant even below the threshold fields for intervalley scattering. The results differ from those of the ballistic model by about 10-50%.

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Deposited On:15 Dec 2010 11:35
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