Position dependence of average electron velocity in a submicrometer GaAs channel

Nag, B. R. ; Deb Roy, M. (1985) Position dependence of average electron velocity in a submicrometer GaAs channel Applied Physics A: Materials Science & Processing, 38 (1). pp. 57-58. ISSN 0947-8396

[img]
Preview
PDF - Publisher Version
185kB

Official URL: http://www.springerlink.com/content/l32qr3u3v33u47...

Related URL: http://dx.doi.org/10.1007/BF00618727

Abstract

The Monte Carlo method has been applied to obtain the average electron velocity at different positions of a submicrometer GaAs channel in the presence of a position independent electric field. Velocity-distance curves are presented for channel lengths of 0.1, 0.2, and 0.5 µm and for lattice temperatures of 300 and 77 K. The curves show significant effects of collisions and boundary conditions.

Item Type:Article
Source:Copyright of this article belongs to Springer-Verlag.
ID Code:28757
Deposited On:15 Dec 2010 11:36
Last Modified:17 May 2016 11:47

Repository Staff Only: item control page