Electron transport in sub-micron GaAs channels at 300 K

Nag, B. R. ; Deb Roy, M. (1983) Electron transport in sub-micron GaAs channels at 300 K Applied Physics A: Materials Science & Processing, 31 (2). pp. 65-70. ISSN 0947-8396

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Official URL: http://www.springerlink.com/content/n67868068j4242...

Related URL: http://dx.doi.org/10.1007/BF00616306


Transient velocity-field characteristics have been computed for GaAs channels having lengths of 0.1, 0.2, 0.5, 1, and 20 µm for electric fields between 1 and 50 kV/cm at 300 K. The results are compared with earlier calculations and the significant features of the computed results are discussed. It is found that the electron motion for all channel lengths and for all fields is significantly affected by collisions. The threshold field for negative differential mobility increases, and the magnitude of the differential mobility decreases with decrease in the length of the sample. The maximum steady-state velocity increases with decrease in the length and may be as high as 5.4×107 cm/s for 0.1 µm samples.

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Deposited On:15 Dec 2010 11:37
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