Nag, B. R. (1997) An empirical relation between the melting point and the direct bandgap of semiconducting compounds Journal of Electronic Materials, 26 (2). pp. 70-72. ISSN 0361-5235
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Official URL: http://www.springerlink.com/content/g76k5j52818hl1...
Related URL: http://dx.doi.org/10.1007/s11664-997-0090-z
Abstract
The melting point is found to vary linearly with the direct bandgap for groups of semiconductors with common anions. Implication of this empirical result is discussed. The linear relation is used to choose between different reported values of melting point for some compounds.
| Item Type: | Article |
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| Source: | Copyright of this article belongs to Minerals Metals &Materials Society. |
| Keywords: | Bandgap; Entropy of Fusion; Melting Point; Semiconductor |
| ID Code: | 28749 |
| Deposited On: | 15 Dec 2010 11:37 |
| Last Modified: | 17 May 2016 11:46 |
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