Nag, B. R. ; Mukhopadhyay, S. (1993) Energy levels in quantum wells of nonparabolic semiconductors Physica Status Solidi B, 175 (1). pp. 103-112. ISSN 0370-1972
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssb.22...
Related URL: http://dx.doi.org/10.1002/pssb.2221750108
Abstract
Energy eigenvalues are given for quantum wells of the GaAs/GaAlAs, GaInAs/AlInAs, and InAs/GaAlSb systems, for widths ranging between 0.5 and 20 nm. The energy band nonparabolicity is shown to affect the values significantly particularly for wells with widths of about 2 nm. The InAs/GaAlSb wells are shown to have lowest energy levels with odd parity because of the negative effective mass in the barrier layer for energies below the mid-gap energy. Experiments are suggested for the detection of these levels.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons, Inc. |
| ID Code: | 28745 |
| Deposited On: | 15 Dec 2010 11:38 |
| Last Modified: | 08 Jun 2011 07:08 |
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