Chattopadhyay, D. ; Nag, B. R. (1970) Infra-red modulation using hot-electron faraday effect in n-InSb Physica Status Solidi B, 40 (2). pp. 701-706. ISSN 0370-1972
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssb.19...
Related URL: http://dx.doi.org/10.1002/pssb.19700400230
Abstract
The effect of a large static electric field on the infra-red modulation due to free-carrier Faraday rotation in n-InSb has been studied theoretically, taking into account the variation of the effective mass due to carrier heating. The theoretical results are of the same order of magnitude as the experimental ones, but no exact agreement was found. It is further shown, that the contribution of the change in the momentum relaxation time to the alteration of the Faraday rotation is insignificant compared to that arising from the change of effective mass.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons, Inc. |
| ID Code: | 28733 |
| Deposited On: | 15 Dec 2010 11:39 |
| Last Modified: | 08 Jun 2011 08:55 |
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