Low-field galvanomagnetic transport in n-type gallium arsenide

Nag, B. R. ; Chattopadhyay, D. ; Dutta, G. M. (1972) Low-field galvanomagnetic transport in n-type gallium arsenide Physica Status Solidi A: Applied Research, 12 (2). pp. 533-537. ISSN 0031-8965

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.22...

Related URL: http://dx.doi.org/10.1002/pssa.2210120223


An iterative technique for the solution of the Boltzmann equation in the presence of a magnetic field is presented. The temperature dependence of low-field Hall mobility and magnetoresistance coefficient of n-type gallium arsenide is studied in the temperature range 77 to 300 °K applying this technique. Polar-mode, deformation potential acoustic, and piezo-electric scattering processes are considered, and the results are compared with those obtained by other methods. Agreement of the Hall mobility with recent experiments is found to be satisfactory.

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ID Code:28720
Deposited On:15 Dec 2010 11:40
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